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Impact of Well Thickness on Static and Dynamic Behavior of InGaN Light-emitting Diode with Single Qu-发光学报2026年02期

Impact of Well Thickness on Static and Dynamic Behavior of InGaN Light-emitting Diode with Single Qu

作者:CHEN Guichul HE Longfei PENG Kun 字体:      

Abstract: In this paper,we present a circuit model single-quantum-wellInGaN/GaN light-emiting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occu(试读)...

发光学报

2026年第02期